Failure Degradation Similarities on Power SiC MOSFET Devices Submitted to Short-Circuit Stress and Accelerated Switching Conditions
Résumé
The aim of this paper is to present a comparison between failure analyses results performed on power SiC devices. Various devices have been submitted to SC (Short-circuit) stress and ITASC (Inverter Test with Accelerated Switching Conditions) method. Some similarities have been detected, as well as the same failure mode represented by a gate-source shorted-circuit.
Domaines
Electronique
Origine : Fichiers produits par l'(les) auteur(s)