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Article Dans Une Revue Microelectronics Reliability Année : 2023

Failure Degradation Similarities on Power SiC MOSFET Devices Submitted to Short-Circuit Stress and Accelerated Switching Conditions

Résumé

The aim of this paper is to present a comparison between failure analyses results performed on power SiC devices. Various devices have been submitted to SC (Short-circuit) stress and ITASC (Inverter Test with Accelerated Switching Conditions) method. Some similarities have been detected, as well as the same failure mode represented by a gate-source shorted-circuit.

Domaines

Electronique
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Dates et versions

hal-04316701 , version 1 (30-11-2023)

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Citer

Joao Oliveira, Pascal Frey, Hervé Morel, Jean-Michel Reynes, Jérémie Burky, et al.. Failure Degradation Similarities on Power SiC MOSFET Devices Submitted to Short-Circuit Stress and Accelerated Switching Conditions. Microelectronics Reliability, 2023, 148, pp.115166. ⟨10.1016/j.microrel.2023.115166⟩. ⟨hal-04316701⟩
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