Drain Current Variability in 2-levels Stacked Nanowire Gate All Around P-type Field Effect Transistors - Archive ouverte HAL Access content directly
Conference Papers Year : 2023

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hal-04305370 , version 1 (27-11-2023)

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Donghyun Kim, Sylvain Barraud, Gérard Ghibaudo, Christoforos Theodorou, Jae Woo Lee. Drain Current Variability in 2-levels Stacked Nanowire Gate All Around P-type Field Effect Transistors. 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2023, Seoul, South Korea. pp.1-3, ⟨10.1109/EDTM55494.2023.10103067⟩. ⟨hal-04305370⟩
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