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Article Dans Une Revue Physical Review B Année : 2023

Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor deposition

Pavel Dudin
José Avila
Mathieu Silly
Marco Pala
Julien Chaste

Résumé

Twisted layers of atomically thin two-dimensional materials support a broad range of quantum materials with engineered optical and transport properties. Transition metal dichalcogenides (TMDs) in the rhombohedral (3R, i.e., 0 • twist) crystal phase have been the focus of significant research interest in optical applications due to their particular broken inversion symmetry. Here, we report experimental and theoretical study of WSe 2 homobilayers obtained in stable 3R configuration by chemical vapor synthesis. We investigate the electronic and structural properties of these 3R WSe 2 bilayers with 3R stacking using micro-Raman spectroscopy, angleresolved photoemission nanospectroscopy measurements, and density functional theory calculations. Our results demonstrate that WSe 2 bilayers with 3R crystal phase (AB stacking) show a significant valence-band splitting at the K point estimated at 550 ± 20 meV. We derived experimentally effective hole masses of 0.48m e and 0.73m e at the K point for upper and lower bands, respectively. Our work opens up perspectives for the development of optoelectronic and spintronic devices based on 3R TMD homobilayers.
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Dates et versions

hal-04302594 , version 1 (23-11-2023)

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Aymen Mahmoudi, Meryem Bouaziz, Anis Chiout, Gaia Di Berardino, Nathan Ullberg, et al.. Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor deposition. Physical Review B, 2023, 108 (4), pp.045417. ⟨10.1103/PhysRevB.108.045417⟩. ⟨hal-04302594⟩
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