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Article Dans Une Revue Journal of Crystal Growth Année : 2023

Thermal strain relaxation of GaAs overgrown on nanovoid based Ge/Si substrate

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hal-04298925 , version 1 (21-11-2023)

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Jonathan Henriques, Bouraoui Ilahi, Alexandre Heintz, Denis Morris, Richard Arès, et al.. Thermal strain relaxation of GaAs overgrown on nanovoid based Ge/Si substrate. Journal of Crystal Growth, 2023, 624, pp.127433. ⟨10.1016/j.jcrysgro.2023.127433⟩. ⟨hal-04298925⟩
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