Epitaxial La<sub>0.5</sub>Sr<sub>0.5</sub>MnO<sub>3‐δ</sub> Bipolar Memristive Devices with Tunable and Stable Multilevel States - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Advanced Materials Interfaces Année : 2023

Epitaxial La0.5Sr0.5MnO3‐δ Bipolar Memristive Devices with Tunable and Stable Multilevel States

Résumé

Valence change memories are novel data storage devices in which the resistance is determined by a reversible redox reaction triggered by voltage. The oxygen content and mobility within the active materials of these devices play a crucial role in their performance. Therefore, materials which present fast oxygen migration properties and can accommodate variable oxygen stoichiometry are promising candidates. In this work, the perovskiteLa0.5Sr0.5MnO3-δ (LSM50) as memristive material is studied, which presents a more facile oxygen vacancy formation and faster oxygen migration compared to other strontium-substituted manganites. For the first time reproducible resistive switching is reported in epitaxial LSM50-based devices with active Ti electrodes, which show large operating window and stable multilevel states. Based on the structural, chemical, and electrical results, a simple phenomenological description of the resistive switching phenomena taking place inthese novel LSM50-based memristive devices is proposed

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Matériaux
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Dates et versions

hal-04297475 , version 1 (21-11-2023)

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Carlos Moncasi, Gauthier Lefèvre, Quentin Villeger, Laetitia Rapenne, Thoai‐khanh Khuu, et al.. Epitaxial La0.5Sr0.5MnO3‐δ Bipolar Memristive Devices with Tunable and Stable Multilevel States. Advanced Materials Interfaces, 2023, 10 (15), ⟨10.1002/admi.202202496⟩. ⟨hal-04297475⟩
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