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Article Dans Une Revue Sensors Année : 2023

Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing

Jules Tillement
François Roy

Résumé

This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 μm photons with a pixel pitch as small as 3 μm. For a 5 μm pixel pitch photodiode, we measured the external quantum efficiency reaching as high as 54%. With substrate removal and an ideal anti-reflective coating, we estimated the internal quantum efficiency as achieving 77% at 1.55 μm. The best measured dark current density reached 5 nA/cm2 at −0.1 V and at 23 °C. The main contributors responsible for this dark current were investigated through the study of its evolution with temperature. We also highlight the importance of passivation with a perimetric contribution analysis and the correlation between MIS capacitance characterization and dark current performance.
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Dates et versions

hal-04296954 , version 1 (21-11-2023)

Identifiants

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Jules Tillement, Cyril Cervera, Jacques Baylet, Christophe Jany, François Nardelli, et al.. Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing. Sensors, 2023, 23 (22), pp.9219. ⟨10.3390/s23229219⟩. ⟨hal-04296954⟩
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