Effects of X-ray and Gamma irradiation on advanced Si/SiGe:C HBTs DC characteristics - Archive ouverte HAL Access content directly
Conference Papers Year : 2023

Effects of X-ray and Gamma irradiation on advanced Si/SiGe:C HBTs DC characteristics

Abstract

Total-ionizing-dose response of two BiCMOS technologies Si/SiGe:C HBTs, the 130 nm BiCMOS9MW and the 55 nm B55, was compared during X-ray and Gamma irradiation. TID degradation effect on the DC characteristics is analyzed showing the main role of the Emitter-Base oxide region, this is supported by TCAD simulations. Impact of short and long-time intervals between measurements was undertaken demonstrating that the degradation of the base current is stable in time. Each irradiation technique was followed by a thermal annealing process. A higher healing impact for the induced damages was more pronounced after the Gamma-ray exposure. In both irradiation cases, an enhanced healing behavior was recorded by the B55 technology. Promising results are found for BiCMOS Si/SiGe HBTs technology in extreme environments especially for the B55 BiCMOS technology.
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Dates and versions

hal-04296152 , version 1 (20-11-2023)

Identifiers

  • HAL Id : hal-04296152 , version 1

Cite

J El Beyrouthy, Bruno Sagnes, F Pascal, A B Ayenew, J Boch, et al.. Effects of X-ray and Gamma irradiation on advanced Si/SiGe:C HBTs DC characteristics. RADiation and its Effects on Components and Systems Conference, Centre National d’Etudes Spatiales, Sep 2023, Toulouse, France. ⟨hal-04296152⟩
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