In situ and real-time investigation of the solidification of silicon by X-ray imaging
Résumé
Aiming to the production of low cost and high efficiency solar cells based on silicon material, all processes either innovative or conventional face challenges linked to formation and development of the grain structure, distortion of the crystal and crystalline defects during the solidification step. Our contribution consists in studying these key and fundamental solidification mechanisms by conducting in situ and time-resolved investigations. Two imaging techniques based on X-ray synchrotron radiation are combined during solidification: X-ray radiography and Bragg diffraction (topography). X-ray radiography brings information on the morphology and kinetics of the solid/liquid (S/L) interface. X-ray Bragg diffraction (topography) gives complementary information about misorientations, structural defect formation and the global and local level of distortion of the crystal. The dynamics of twinning, grain competition, sub-grain formation and of the related crystal distortions have been studied in silicon with this method as well as the effect of the impurities on grain nucleation and defect formation.
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