Silicon diffusion in AlN
Résumé
In this study, we investigate the diffusion of Si donors in AlN. Amorphous Si 1−x N x sputtered on the surface of bulk AlN with low dislocation density is used as a Si source. The diffusion experiments are conducted through isochronal and isothermal annealing in a protective N 2 atmosphere at temperatures between 1500°C and 1700°C. The Si depth profiles measured by secondary ion mass
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