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              <p>With the newest 3.3 kV discrete SiC MOSFET being released, Current Source Inverters (CSI) are able tobe adapted to 1.5 kVOC PV strings and substitute actual voltage source-based conversion systems. Inorder to characterize the switching performances of these new devices, a Double-Pulse Test (DPT) circuithas been developed. The tested switching cell is based on 3.3 kV / 120 m█ TO-263-7 discrete MOSFETsusing synchronous rectification mode. This configuration implies some challenges and introduces extrabody diode reverse recovery losses. This paper discusses the main choices, methods, issues and resultsconcerning the switching event for future CSI using 3.3 kV SiC MOSFETs.</p>
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