Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target
Résumé
For medium voltage, the SiC BJT is a convenient solution to reduce the on-losses and it could have the advantage to be optical controlled, to ease the serial connection of BJT. The design of a 10 kV, 10 A SiC BJT is described. The different fabrication st
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