Tuning the Mn5Ge3 and Mn11Ge8 thin films phase formation on Ge(111) via growth process
Abstract
We have studied the stability of manganese germanide thin films grown on Ge(111) substrates by three different growth methods: solid phase epitaxy, reactive deposition epitaxy and co-deposition. By combining X-ray diffraction and magnetic measurements, we demonstrate that we can form either Mn 5 Ge 3 or Mn 11 Ge 8 thin films depending on the growth processes. In the case of solid phase epitaxy, we explain the phase formation sequence by taking into consideration the kinetic and thermodynamic processes involved. Tuning phase formation of the manganese germanide thin films was determined using in situ X-ray diffraction and the effect of the thin film thickness on the Mn 5 Ge 3 thermal stability was investigated.
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