Surface Two-Dimensional Hole Gas in Si doped β-Ga2O3 Thin Film
Résumé
Although two-dimensional electron gases have been realized in a number of semiconductor surfaces, examples of two-dimensional hole gases (2DHG)-the counterpart to 2DEG-are still very limited. Besides, owing to the deep energy level nature of potential dopants, achieving acceptor p-type β-Ga2O3 is a well-known challenge so far. In this work, we report what appears to be an exceptional p-type 2DHG surface on a Si-doped monoclinic (010) β-Ga2O3 crystal which otherwise is n-type in the bulk. The majority of the free carries at the surface have been determined to be holes with a sheet concentration of p ~ 8.7×10 13 cm-2 and a puzzlingly high mobility value of µh ~ 80 cm 2 /(V•s) at room T.
Domaines
Physique [physics]| Origine | Fichiers produits par l'(les) auteur(s) |
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