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Poster De Conférence Année : 2023

Locally Ion Implantation and Annealing Effects in Diamond

Résumé

Diamond has demonstrated interesting properties for high power applications. However numerous technological obstacles make difficult the fabrication of power devices on diamond. Diamond doping in-situ gas phase is today the most efficient technique. In fact, the possibility to dope locally by ion implantation is indispensable for establishing a diamond manufacturing chain in particular to achieve the highest possible doping.
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Dates et versions

hal-04271407 , version 1 (06-11-2023)

Identifiants

  • HAL Id : hal-04271407 , version 1

Citer

M.A. Pinault-Thaury, Mohamed Bouras, Raid Gourad, Karine Isoird, Fuccio Cristiano, et al.. Locally Ion Implantation and Annealing Effects in Diamond. 3rd MOMENTOM INTERNATIONAL CONGRESS, Mar 2023, Gif-sur-yvette, France. 2023. ⟨hal-04271407⟩
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