Tight Binding and Density Functional Theory of Tailoring Electronic Properties in Al1−xInxN/AlN/GaN High Electron Mobility Transistors (HEMTs) - Archive ouverte HAL Access content directly
Book Sections Year : 2022
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hal-04267855 , version 1 (02-11-2023)

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Meziani Abdelhakim, Abdul-Rahman Allouche, Telia Azzedine, Hilmi Unlu. Tight Binding and Density Functional Theory of Tailoring Electronic Properties in Al1−xInxN/AlN/GaN High Electron Mobility Transistors (HEMTs). Progress in Nanoscale and Low-Dimensional Materials and Devices, 144, Springer International Publishing, pp.669-707, 2022, Topics in Applied Physics, 978-3-030-93459-0. ⟨10.1007/978-3-030-93460-6_24⟩. ⟨hal-04267855⟩
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