Micromachining and Packaging of Smart Probes for Sub-mmW on-Wafer Measurements
Résumé
In recent years, advanced silicon technologies are well-suited for designing integrated circuits optimized in G-band (140-220GHz). Validating these technologies requires the integration of active probes in functional packages, achieved by implementing the femtosecond laser micro-structuring technique, to extract transistor performance.
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