GaAs-chip-based mid-infrared supercontinuum generation - Archive ouverte HAL
Article Dans Une Revue Light: Science and Applications Année : 2023

GaAs-chip-based mid-infrared supercontinuum generation

Geoffroy Granger
  • Fonction : Auteur
Myriam Bailly
  • Fonction : Auteur
Hugo Delahaye
  • Fonction : Auteur
Cristian Jimenez
  • Fonction : Auteur
Idris Tiliouine
Yann Leventoux
  • Fonction : Auteur
Jean-Christophe Orlianges
Vincent Couderc
Arnaud Grisard
  • Fonction : Auteur
Eric Lallier
  • Fonction : Auteur
Sébastien Février

Résumé

The mid-infrared spectral region opens up new possibilities for applications such as molecular spectroscopy with high spatial and frequency resolution. For example, the mid-infrared light provided by synchrotron sources has helped for early diagnosis of several pathologies. However, alternative light sources at the table-top scale would enable better access to these state-of-the-art characterizations, eventually speeding up research in biology and medicine. Midinfrared supercontinuum generation in highly nonlinear waveguides pumped by compact fiber lasers represents an appealing alternative to synchrotrons. Here, we introduce orientation-patterned gallium arsenide waveguides as a new versatile platform for mid-infrared supercontinuum generation. Waveguides and fiber-based pump lasers are optimized in tandem to allow for the group velocities of the signal and the idler waves to match near the degeneracy point. This configuration exacerbates supercontinuum generation from 4 to 9 µm when waveguides are pumped at 2750 nm with few-nanojoule energy pulses. The brightness of the novel mid-infrared source exceeds that of the thirdgeneration synchrotron source by a factor of 20. We also show that the nonlinear dynamics is strongly influenced by the choice of waveguide and laser parameters, thus offering an additional degree of freedom in tailoring the spectral profile of the generated light. Such an approach then opens new paths for high-brightness mid-infrared laser sources development for high-resolution spectroscopy and imaging. Furthermore, thanks to the excellent mechanical and thermal properties of the waveguide material, further power scaling seems feasible, allowing for the generation of watt-level ultra-broad frequency combs in the mid-infrared.
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Dates et versions

hal-04247195 , version 1 (24-01-2024)

Identifiants

Citer

Geoffroy Granger, Myriam Bailly, Hugo Delahaye, Cristian Jimenez, Idris Tiliouine, et al.. GaAs-chip-based mid-infrared supercontinuum generation. Light: Science and Applications, 2023, 12, ⟨10.1038/s41377-023-01299-9⟩. ⟨hal-04247195⟩
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