Communication Dans Un Congrès
Année : 2023
Eric TOURNIE : Connectez-vous pour contacter le contributeur
https://hal.science/hal-04245702
Soumis le : mardi 17 octobre 2023-11:18:45
Dernière modification le : mardi 9 janvier 2024-09:02:14
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- HAL Id : hal-04245702 , version 1
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Tournié Eric, M. Paparella, A. Remis, A. Gilbert, M. Rio-Calvo, et al.. The direct epitaxy of III-V lasers on Silicon (Si) substrates has been considered for decades as an important objective for the realization of integrated photonics chips. Major progress has been achieved recently thanks to the understanding of the defect generation mechanisms, and systematic studies of their suppression [1, 2], or at least the drastic reduction of their density into the active region of the device.
In this presentation, we will discuss the challenges related to the growth of III-Vs on Si and present the current state-of-the-art of mid-IR lasers grown on Si .
In addition, we will present recent advances in the epitaxial integration of DLs on patterned Si photonics wafer equipped with SiN waveguides. Growth and device fabrication challenges arising from
the template architecture were overcome to obtain DLs butt-coupled to the passive waveguides. We demonstrate several mW outpower of emitted light in continuous wave operation at room temperature from the DL grown on the patterned Si photonic wafer . In addition, we will show that, in our configuration, around 10% of the laser light is coupled into the passive SiN waveguides, in good agreement with theoretical calculations .
These results open the route to active photonic integrated circuits perating in the mid-infrared for sensing applications.. European Semiconductor Laser Workshop, University of Glasgow, Sep 2023, Glasgow, United Kingdom. ⟨hal-04245702⟩
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