Ferroelectric Hf 0.5 Zr 0.5 O 2 films with improved endurance obtained through low temperature epitaxial growth on seed layers
Résumé
A seed layer with a thickness of about 2 nm allows reduction of the threshold temperature for epitaxy of Hf 0.5 Zr 0.5 O 2 films at least by 200 °C. Films deposited at low temperatures on seed layers show reduced ferroelectric fatigue and improved endurance.
Domaines
Matière Condensée [cond-mat]
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