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Article Dans Une Revue Nano Letters Année : 2023

Manipulating Dirac states in BaNiS$_2$ by surface charge doping

Résumé

In the Dirac semimetal BaNiS$_2$ , the Dirac nodes are located along the Γ − M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ − M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS$_2$ single crystals. By means of first-principles calculations, we give full account for this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces and heterostructures.
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Dates et versions

hal-04236886 , version 1 (11-10-2023)

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Jiuxiang Zhang, Thibault Daniel Pierre Sohier, Michele Casula, Zhesheng Chen, Jonathan Caillaux, et al.. Manipulating Dirac states in BaNiS$_2$ by surface charge doping. Nano Letters, 2023, 23 (5), pp.1830-1835. ⟨10.1021/acs.nanolett.2c04701⟩. ⟨hal-04236886⟩
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