Proceedings/Recueil Des Communications Solid State Phenomena Année : 2023

Epitaxial Growth of Boron Carbide on 4H-SiC

Résumé

In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4° off substrate using chemical vapor deposition (CVD) is reported. Towards this end, a two-step procedure was developed, involving the 4H-SiC substrate boridation under BCl 3 precursor at 1200°C, followed by conventional CVD under BCl 3 + C 3 H 8 at 1600°C. Such a procedure allowed obtaining reproducibly monocrystalline (0001) oriented films of B x C with a step flow morphology at a growth rate of 1.9 μm/h. Without the boridation step, the layers are systematically polycrystalline. The study of the epitaxial growth mechanism shows that a monocrystalline B x C layer is formed after boridation but covered with a B-and Si-containing amorphous layer. Upon heating up to 1600°C, under pure H 2 atmosphere, the amorphous layer was converted into epitaxial B x C and transient surface SiB x and Si crystallites. These crystallites disappear upon CVD growth.

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Dates et versions

hal-04235394 , version 1 (25-10-2023)

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Yamina Benamra, Laurent Auvray, Jérôme Andrieux, François Cauwet, Maria-Paz Alegre, et al.. Epitaxial Growth of Boron Carbide on 4H-SiC. International conference on silicon carbide and related materials 2022, Solid State Phenomena, 343, pp.3-8, 2023, ⟨10.4028/p-6t47nz⟩. ⟨hal-04235394⟩
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