Reconstructing the potential configuration in a high-mobility semiconductor heterostructure with scanning gate microscopy - Archive ouverte HAL
Article Dans Une Revue SciPost Physics Année : 2023

Reconstructing the potential configuration in a high-mobility semiconductor heterostructure with scanning gate microscopy

Résumé

The weak disorder potential seen by the electrons of a two-dimensional electron gas in high-mobility semiconductor heterostructures leads to fluctuations in the physical properties and can be an issue for nanodevices. In this paper, we show that a scanning gate microscopy (SGM) image contains information about the disorder potential, and that a machine learning approach based on SGM data can be used to determine the disorder. We reconstruct the electric potential of a sample from its experimental SGM data and validate the result through an estimate of its accuracy.
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hal-04235263 , version 1 (19-09-2024)

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Gaëtan Percebois, Antonio Lacerda-Santos, Boris Brun, Benoit Hackens, Xavier Waintal, et al.. Reconstructing the potential configuration in a high-mobility semiconductor heterostructure with scanning gate microscopy. SciPost Physics, 2023, 15 (6), pp.242. ⟨10.21468/SciPostPhys.15.6.242⟩. ⟨hal-04235263⟩
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