Article Dans Une Revue (Data Paper) Microelectronics Reliability Année : 2023

Online die temperature measurement using S-parameters in GaN-based power converters

Résumé

Die temperature (Tj) measurement of GaN HEMTs is of high interest to enable reducing design margin and the implementation of reliability driven control schemes and protections. On-state resistance (Rds,on) has been identified as a relevant thermo-electric sensitive parameter (TSEP) for Tj measurement requiring no extra temperature sensor. It is commonly measured in time-domain, based on the on-state voltage drop and the load current. In this work, the Tj of a GaN-on-Si power IC in a dc-dc converter is deduced from measurements conducted online, directly in the frequency domain using RF injection and S-parameter measurements. Thereby, the stimulus is injected on top of the processed power to probe either Rds,on, or the resistance of an on-chip Schottky diode used as thermal sensor. Temperature dependent experimental validation up to 150°C is performed on a switching dc-dc power converter, validating the approach for online temperature measurement using RF injection.

Fichier principal
Vignette du fichier
Online die temperature measurement using S-parameters in GaN-based power converters_2023.pdf (6.22 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Licence

Dates et versions

hal-04228166 , version 1 (04-10-2023)

Licence

Identifiants

Citer

Yoann Pascal, Frank Daschner, Stefan Mönch, Marco Liserre, Michael Höft, et al.. Online die temperature measurement using S-parameters in GaN-based power converters. Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2023.115085⟩. ⟨hal-04228166⟩
48 Consultations
285 Téléchargements

Altmetric

Partager

  • More