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Article Dans Une Revue IEEE Transactions on Magnetics Année : 2009

MgO-Based Epitaxial Magnetic Tunnel Junctions Using Fe-V Electrodes

Frédéric Bonell
Stéphane Andrieu
F. Bertran
P. Lefevre
  • Fonction : Auteur
A.T. Ibrahimi
  • Fonction : Auteur
François Montaigne

Résumé

To examine the influence of the barrier quality in fully epitaxial Fe/MgO/Fe(001) magnetic tunnel junctions (MTJs), we propose to use Fe-V alloys as magnetic electrodes. This leads to a reduced misfit with MgO. We actually observe, by high-resolution electron microscopy (HREM) and local strain measurements, that the misfit dislocations density in the MgO barrier is lower when it is grown on Fe-V(001). This improvement of the crystalline quality of the MgO barrier actually leads to a significant increase of the tunnel magneto-resistance (TMR), despite the loss of spin polarization (SP) in these alloys, which was measured by spin-polarized X-ray photoelectron spectroscopy (SR-XPS).
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Dates et versions

hal-04224930 , version 1 (02-10-2023)

Identifiants

Citer

Frédéric Bonell, Stéphane Andrieu, F. Bertran, P. Lefevre, A.T. Ibrahimi, et al.. MgO-Based Epitaxial Magnetic Tunnel Junctions Using Fe-V Electrodes. IEEE Transactions on Magnetics, 2009, 45 (10), pp.3467-3471. ⟨10.1109/TMAG.2009.2022644⟩. ⟨hal-04224930⟩
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