Electron-phonon coupling on strained Ge/Si(111)-(5 × 5) surfaces - Archive ouverte HAL Access content directly
Journal Articles Physical Review B Year : 2012

Electron-phonon coupling on strained Ge/Si(111)-(5 × 5) surfaces

Yannick Fagot-Revurat
Antonio Tejeda
Bertrand Kierren
Alessandro Nicolaou
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Patrick Le Fèvre
François Bertran
Amina Taleb-Ibrahimi
Daniel Malterre

Abstract

We investigate the structural and electronic properties of strained Ge/Si(111)-(5×5) surfaces by means of scanning tunneling microscopy and high-resolution angle-resolved photoemission spectroscopy. The homogeneous (5×5) reconstructed overlayers are characterized by three electronic surface states, similar to the Si(111)-(7×7) surface. The dispersion of the dangling bond related surface state exhibits the same periodicity as that of the (5×5) reconstruction. Moreover, a careful analysis of the shape and width of this surface state provides striking evidence of electron-phonon coupling at low temperatures. By considering the spectral function within a simple Debye model, we determine both the Debye energy and the electron-phonon coupling strength. The latter value is further confirmed by analyzing the temperature-dependent phonon broadening of the dangling bond related surface state linewidth.
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Dates and versions

hal-04223016 , version 1 (05-10-2023)

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Mathieu Stoffel, Yannick Fagot-Revurat, Antonio Tejeda, Bertrand Kierren, Alessandro Nicolaou, et al.. Electron-phonon coupling on strained Ge/Si(111)-(5 × 5) surfaces. Physical Review B, 2012, 86 (19), pp.195438. ⟨10.1103/PhysRevB.86.195438⟩. ⟨hal-04223016⟩
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