Perovskite materials are particularly appropriate for single-junction and tandem solar cells, for which prospects for very high efficiencies >30% are today realized. A suitable integration of an efficient transparent electrode into the front of the perovskite solar subcell is required to do so. Here, the compatibility of two sputtering recipes allowing the integration of a transparent ITO top electrode is evaluated. In the literature, the PIN-type architecture appears to be more promising experimentally for tandem applications. Our study was thus focused on a PIN-type semitransparent device. According to an initial stage of optimization of transporting layers P and N, the following architecture “Glass/ITO/TFB/FAxCs1–xPb(IyBr1–y)3/PC60BM/SnO2/ITO” was selected. In the present paper, it was shown that a spontaneous recovery of semitransparent perovskite cells’ performances can occur even after a possible damage during the sputtered ITO integration. This leads to semitransparent perovskite cells with around 11% power conversion efficiency, which has the potential of exceeding 25% in tandem association. In addition, with the help of a photoluminescence tool, the origin of initial flaws and the proof of recovery after 450 h of dark storage were demonstrate