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Article Dans Une Revue Materials Science in Semiconductor Processing Année : 2023

Germanium Surface Wet-Etch-Reconditioning for Porous Lift-off and Substrate Reuse

Jinyoun Cho
  • Fonction : Auteur
Kristof Dessein
  • Fonction : Auteur

Résumé

Reducing both the cost and weight of Germanium (Ge)-based devices is a key concern in extending these technologies to mainstream applications. In this framework, the porous Ge liftoff, based on a mesoporous Ge layer (PGe), shaped by bipolar electrochemical etching (BEE), constitutes an appealing strategy allowing the separation of lightweight, flexible, and low-cost devices and substrate reuse. However, after the device detachment, the broken pillar residues on the host substrate's surface prevent its reuse. Here, we report on the development and application of a reconditioning process based on an aqueous HF:H 2 O 2 :H 2 O (10:80:10, v-v-v) mixture without the need for Chemical Mechanical Polishing (CMP). We found that a mixed kinetic-and diffusion-controlled wet etching leads to surface polishing. Flat reconditioned substrates with
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Dates et versions

hal-04214455 , version 1 (22-09-2023)

Identifiants

Citer

Alexandre Chapotot, Bouraoui Ilahi, Javier Arias-Zapata, Tadeáš Hanuš, Ahmed Ayari, et al.. Germanium Surface Wet-Etch-Reconditioning for Porous Lift-off and Substrate Reuse. Materials Science in Semiconductor Processing, 2023, 168, pp.107851. ⟨10.1016/j.mssp.2023.107851⟩. ⟨hal-04214455⟩
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