Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices
Résumé
Investigation of the doped areas in 4H-SiC power devices has been done by non-destructive characterization methods. It consists of local measurements of the surface potential by Kelvin Probe Force Microscopy (KPFM) coupled with scanning electron microscopy and µ-Raman spectroscopy. Near-field mappings of the devices' surface have been realized and allow us to differentiate their differently doped areas.
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