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Article Dans Une Revue IEEE Transactions on Magnetics Année : 2023

Engineering of Voltage Controlled Magnetic Anisotropy Magnetic Tunnel Junctions at Cryogenic Temperatures

Résumé

We identified through numerical simulations the optimal condition to have a deterministic switching regime assisted by Voltage Controlled Magnetic Anisotropy (VCMA). To minimize the write energy required to reach this regime, we measure the VCMA coefficient ξ on perpendicular magnetic tunnel junctions (pMTJ) with high resistance-area product (RA) and varying thicknesses of the FeCoB storage layer and the naturally oxidized tunnel barrier. The VCMA coefficient is higher as the effective anisotropy decreases, which is the case for larger Mg and FeCoB thicknesses. The temperature dependence of ξ was shown to increase from room temperature to 5K, showing values up to 35 fJ/Vm at 10K.
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Dates et versions

hal-04205048 , version 1 (12-09-2023)

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Pedro Brandao Veiga, Ricardo Sousa, Liliana Buda-Prejbeanu, Stephane Auffret, Isabelle Joumard, et al.. Engineering of Voltage Controlled Magnetic Anisotropy Magnetic Tunnel Junctions at Cryogenic Temperatures. IEEE Transactions on Magnetics, 2023, 59 (11), pp.1-5. ⟨10.1109/TMAG.2023.3284503⟩. ⟨hal-04205048⟩
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