Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions - Archive ouverte HAL Accéder directement au contenu
Pré-Publication, Document De Travail Année : 2023

Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions

Résumé

Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions enable to emulate spiking neurons in hardware. The output spiking rate was controlled by varying the dc bias voltage across the device. The field-free operation of this two terminal device and its robustness against an externally applied magnetic field make it a suitable candidate to mimic neuron response in a dense Neural Network (NN). The small energy consumption of the device (4-16 pJ/spike) and its scalability are important benefits for embedded applications. This compact perpendicular magnetic tunnel junction structure could finally bring spiking neural networks (SNN) to sub-100nm size elements.
Fichier principal
Vignette du fichier
Main (1).pdf (4.77 Mo) Télécharger le fichier
Main.pdf (4.75 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04204509 , version 1 (13-09-2023)

Identifiants

Citer

Louis Farcis, Bruno Teixeira, Philippe Talatchian, David Salomoni, Ursula Ebels, et al.. Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions. 2023. ⟨hal-04204509⟩
150 Consultations
47 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More