Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence - Archive ouverte HAL
Article Dans Une Revue Nanotechnology Année : 2023

Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence

Résumé

In order to elucidate the mechanisms responsible for cathodoluminescence intensity variations at the scale of single InGaN/GaN nanowire heterostructures, a methodology is proposed based on a statistical analysis on ensembles of several hundreds of nanowires exhibiting a diameter of 180, 240 and 280 nm. For 180 nm diameter, we find that intensitiy variations are consistent with incorporation of point defects obeying Poisson’s statistics. For wider diameters, intensity variations at the scale of single NWs are observed and assigned to local growth conditions fluctuations. Finally, for the less luminescent nanowires, a departure from Poisson’s statistics is observed suggesting the possible clustering of non independent point defects.
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Dates et versions

hal-04192006 , version 1 (10-10-2023)

Identifiants

Citer

Alexandre Concordel, Névine Rochat, Anh My Nhat Quach, Jean-Luc Rouvière, Gwénolé Jacopin, et al.. Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence. Nanotechnology, 2023, 34 (49), pp.495702. ⟨10.1088/1361-6528/acf473⟩. ⟨hal-04192006⟩
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