Roadmap on ferroelectric hafnia- and zirconia-based materials and devices - Archive ouverte HAL
Article Dans Une Revue (Article De Synthèse) APL Materials Année : 2023

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

José Silva
Centre of Physics of the University of Minho
Ruben Alcala
NaMLab gGmbH
Uygar Avci
Intel Corporation [Hillsboro]
Nick Barrett
Service de physique de l'état condensé
Laura Bégon-Lours
IBM Research Lab. - Zürich
Mattias Borg
Seungyong Byun
Seoul National University [Seoul]
Sou-Chi Chang
Intel Corporation [Hillsboro]
Sang-Wook Cheong
Duk-Hyun Choe
Jean Coignus
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
Veeresh Deshpande
Athanasios Dimoulas
Catherine Dubourdieu
Centre of Physics of the University of Minho
Ignasi Fina
Hiroshi Funakubo
Laurent Grenouillet
Alexei Gruverman
Jinseong Heo
Michael Hoffmann
H. Alex Hsain
Fei-Ting Huang
Cheol Seong Hwang
Jorge Íñiguez
Jacob Jones
Ilya Karpov
Alfred Kersch
Taegyu Kwon
Suzanne Lancaster
Maximilian Lederer
Younghwan Lee
Patrick Lomenzo
Lane Martin
Simon Martin
Shinji Migita
Thomas Mikolajick
Beatriz Noheda
Min Hyuk Park
Karin Rabe
Sayeef Salahuddin
Florencio Sánchez
Konrad Seidel
Takao Shimizu
Takahisa Shiraishi
Stefan Slesazeck
Akira Toriumi
Hiroshi Uchida
Bertrand Vilquin
INL - Electronique
CV
Xianghan Xu
Kun Hee Ye
Uwe Schroeder

Résumé

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

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Matériaux
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Bertrand Vilquin  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-04191448

Soumis le : jeudi 31 août 2023-15:48:18

Dernière modification le : mardi 3 septembre 2024-11:16:05

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hal-04191448 , version 1 (31-08-2023)

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José Silva, Ruben Alcala, Uygar Avci, Nick Barrett, Laura Bégon-Lours, et al.. Roadmap on ferroelectric hafnia- and zirconia-based materials and devices. APL Materials, 2023, 11 (8), pp.089201. ⟨10.1063/5.0148068⟩. ⟨hal-04191448⟩

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