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Article Dans Une Revue Physical Review Research Année : 2023

Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride

Julien Chaste
Yannick J. Dappe
François Bertran
Patrick Le Fèvre
Marco Pala

Résumé

Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of onedimensional quantum materials. Electronic and structural properties of chain-like InTe are essential for better understanding of device applications such as thermoelectrics. Here, we use scanning tunneling microscopy/spectroscopy (STM/STS) measurements and density functional theory (DFT) calculations to directly image the in-plane structural anisotropy in tetragonal Indium Telluride (InTe). As results, we report the direct observation of one-dimensional In$^{1+}$ chains in InTe. We demonstrate that InTe exhibits a band gap of about 0.40 $\pm$ 0.02 eV located at the $M$ point of the Brillouin zone. Additionally, line defects are observed in our sample, were attributed to In$^{1+}$ chain vacancy along the c-axis, a general feature in many other TlSe-like compounds. Our STS and DFT results prove that the presence of In$^{1+}$ induces localized gap state, located near the valence band maximum (VBM). This acceptor state is responsible for the high intrinsic p-type doping of InTe that we also confirm using angle-resolved photoemission spectroscopy.
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Licence : CC BY - Paternité

Dates et versions

hal-04190986 , version 1 (30-08-2023)
hal-04190986 , version 2 (08-09-2023)

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Paternité

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Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer, Julien Chaste, César González, et al.. Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride. Physical Review Research, 2023, 5 (3), pp.033152. ⟨10.1103/PhysRevResearch.5.033152⟩. ⟨hal-04190986v2⟩
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