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Communication Dans Un Congrès Année : 2023

Study of Imprint Dynamics in HZO Ferroelectric Capacitors

Résumé

The discovery of the ferroelectric orthorhombic phase in doped HfO2 gave a major boost to the interest for integrated ferroelectric oxides in the CMOS industry [1]. Given its low crystallisation temperature the Hf1-xZrxO2 solid solution (x = 0.5), i.e Hf0.5Zr0.5O2 (HZO) is an excellent candidate for both front and back-end of line integration of ferroelectric Non-Volatile Memories (NVM) or artificial synapses [2]. Although promising demonstrations of have been disclosed, achieving a stable cycling with minimum imprint behavior remains a significant challenge [3]. Imprint induces as a shift of the Polarization-Voltage (P-V) curve along the voltage axis during a retention stage. The direction in which the hysteresis curve is shifted is dictated by the stored polarization state which can in turn lead to a failure during read operation. In this work, imprint dynamics is studied from 1µs up to 104s in 10nm HZO capacitors with TiN electrodes through a dedicated experimental protocol. In addition, imprint was also investigated on intermediate polarization states. It is shown that P-V curves exhibited a neck suggesting a local rearrangement of electric charges and polarization within ferroelectric domains and/or grains. References: [1] T. S. Böscke et al., Applied Physics Letters, 99, p. 102903, (2011) [2] B. Manchon et al., Physica Status Solidii (RRL), 16, p. 2100585, (2022) [3] J. Bouaziz et al., Applied Physics Letters, 118, p. 082901, (2021)
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Dates et versions

hal-04190736 , version 1 (29-08-2023)

Identifiants

  • HAL Id : hal-04190736 , version 1

Citer

Benoît Manchon, Greta Segantini, Pedro Rojo Romeo, Ingrid Canero Infante, Dominique Drouin, et al.. Study of Imprint Dynamics in HZO Ferroelectric Capacitors. International Symposium on Applications of Ferroelectrics 2023, IEEE; UFFC, Jul 2023, Cleveland, United States. ⟨hal-04190736⟩
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