Integrated metrology devices dedicated to transient Harman measurement of silicon nano-meshes
Résumé
In this work, we propose an adaptation of the transient Harman technique to suspendedcrystalline nanomembranes Figure 1 b Additionally, following [ 10 ], a correction factor taking intoaccount radiation, contact resistances and Joule effect is determined. Finally, we present a deviceimplementation of the method that enable direct access to zT through purely electrical measurementswithout relying on se parate measurements of transport parameters.