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Article Dans Une Revue Nanotechnology Année : 2023

Two dimensional boron nitride growth on nickel foils by plasma assisted molecular beam epitaxy from elemental B and N sources

Résumé

The growth of two dimensional sp 2 -bonded boron nitride (2D-BN) was studied in a plasma-assisted molecular beam epitaxy set-up, using independent boron and nitrogen sources. We studied the growth conditions on polycrystalline Ni foils: B and N respective fluxes, growth temperature and time, which are influencing the surface morphology, stoichiometry and the 2D-BN domain size. Using a B/N precursor flux ratio ≫1 yields films with incorporated boron largely in excess and intermixed with 2D-BN. On the contrary, precursor flux ratios from moderately B-rich to moderately N-rich leads to stoichiometric 2D-BN. The optimum growth temperature is found to be 900 °C, a temperature for which the crystallographic quality is improved compared to lower temperatures thanks to the increased adatom surface mobility although a partial sublimation of BN occurs. Increasing the growth time under the optimized settings shows that the growth does not occur in a layer-by-layer mode, but rather by stacking BN domains on top of each other with a rather slow lateral extension of the domains.
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Dates et versions

hal-04187851 , version 1 (16-11-2023)

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Walter Batista-Pessoa, Xavier Wallart, Dominique Vignaud. Two dimensional boron nitride growth on nickel foils by plasma assisted molecular beam epitaxy from elemental B and N sources. Nanotechnology, 2023, Nanotechnology, 34 (41), pp.415601. ⟨10.1088/1361-6528/ace450⟩. ⟨hal-04187851⟩
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