Selective growth of graphene films on Gallium-Focused Ion Beam irradiated domains
Résumé
Graphene a single layer of carbon atoms tightly bound in a hexagonal honeycomb lattice to form a two-dimensional lattice, is a very interesting material with promising electronic, optical, chemical and mechanical applicative potential 1. The properties of graphene make is suitable for a wide range of applications, however, its applicative future still depend on large scale technologies capable to robustly and reproducibly transfer its outstanding intrinsic properties into devices or complex structures. It must be recognized that a crucial technological problem, that still inhibits the applicability of high quality graphene material properties, is related to the patterning of this material using traditional top down instruments and lithographical methods. In this work we will detail our investigations on applying a precise 30 keV Ga + ion irradiation to selectively shape and modify a copper precursor surface for promoting the local growth of graphene surface domains. The morphology of these domains are investigated using Scanning Tunneling Microscopy and Spectroscopy (STM/STS) to probe simultaneously the structural and the electronic properties at the atomic scale of the graphene films.
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