Narrow linewidth near-UV InGaN laser diode based on external cavity fiber Bragg grating - Archive ouverte HAL
Article Dans Une Revue Optics Letters Année : 2021

Narrow linewidth near-UV InGaN laser diode based on external cavity fiber Bragg grating

Résumé

We realize a fiber Bragg grating InGaN-based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrowband fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode suppression ratio and mW output power. Detailed frequency noise analysis reveals sub-MHz integrated linewidth and 16 kHz intrinsic linewidth. Such a narrow linewidth laser diode in the near-UV domain with a compact and low-cost design could find applications whenever coherency and interferometric resolutions are needed.
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hal-04182803 , version 1 (18-08-2023)

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Antoine Congar, Mathilde Gay, Georges Perin, Dominique Mammez, Jean-Claude Simon, et al.. Narrow linewidth near-UV InGaN laser diode based on external cavity fiber Bragg grating. Optics Letters, 2021, 46 (5), pp.1077-1080. ⟨10.1364/OL.409789⟩. ⟨hal-04182803⟩
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