Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113) B substrate - Archive ouverte HAL
Article Dans Une Revue Applied Physics Letters Année : 1999

Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113) B substrate

D. Lacombe
  • Fonction : Auteur
Anne Ponchet
S. Fréchengues
  • Fonction : Auteur
V. Drouot
  • Fonction : Auteur
N. Bertru
  • Fonction : Auteur
B. Lambert
  • Fonction : Auteur
A. Le Corre
  • Fonction : Auteur

Résumé

Strained Ga0.2In0.8As and InAs islands were grown on a InP(113)B substrate by gas source molecular beam epitaxy and examined by transmission electron microscopy and atomic force microscopy. The islands are mainly bounded by the low-index facets {001}, {111}B, and {110} [inclination with respect to the (113)B surface of 25°, 29°, and 31°, respectively]. Some of the consequences of the substrate orientation on the island shape and formation are discussed.
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Dates et versions

hal-04175201 , version 1 (01-08-2023)

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Citer

D. Lacombe, Anne Ponchet, S. Fréchengues, V. Drouot, N. Bertru, et al.. Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113) B substrate. Applied Physics Letters, 1999, 74 (12), pp.1680-1682. ⟨10.1063/1.123653⟩. ⟨hal-04175201⟩
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