First attempts of WSe2 growth on GaP(111)B substrates by MBE
Résumé
Few layers WSe2 are grown on GaP(111)B surfaces passivated by selenium. The layers remains 2D at low growth temperature (Tg = 200-250°C) while exhibiting the formation of the metastable 1T’ phase. Medium growth temperatures (400-550°C) lead to a poor crystalline surface quality. In both cases, annealing over 600°C allows recovering the stable 1H/2H phase and a 2D morphology. At high temperatures (650-700°C), the formation of WSe2 is accompanied by excess metallic W deposition. Raman features are only observed on the 1H/2H phase for which the A1’ excitation line is detected for a layer thickness above 2 MLs.
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