Structural characterization of organic monolayers on Si〈111〉 from capacitance measurements - Archive ouverte HAL
Article Dans Une Revue Electrochimica Acta Année : 2000

Structural characterization of organic monolayers on Si〈111〉 from capacitance measurements

Résumé

This work presents new data on modifications to SiŽ111 surfaces by reduction of diazonium salts. It is shown that a monolayer thickness requires a careful control of the amount of radicals generated. Capacitance measurements performed under accumulation at n-type SiŽ111 modified surfaces indicate a small density of electronic states at the Si molecule interface. It is further demonstrated that analyzing capacitance data in terms of an effective dielectric constant may be used to characterize the layer structure. The influence of the molecule structure on the density of layers and the re-oxidation at modified surfaces are thus investigated. The mechanism of grafting is also discussed. © 2000 Elsevier Science Ltd. All rights reserved.

Domaines

Chimie Matériaux

Dates et versions

hal-04166356 , version 1 (19-07-2023)

Identifiants

Citer

Philippe Allongue, Catherine Henry de Villeneuve, Jean Pinson. Structural characterization of organic monolayers on Si〈111〉 from capacitance measurements. Electrochimica Acta, 2000, 45 (20), pp.3241-3248. ⟨10.1016/S0013-4686(00)00428-X⟩. ⟨hal-04166356⟩
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