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Article Dans Une Revue Electrochimica Acta Année : 2000

The preparation of flat H–Si(111) surfaces in 40% NH4F revisited

Résumé

The reasons why ideally flat H–Si(111) surface can be prepared by NH4F etching are investigated from correlation between AFM observations and experimental conditions used for etching. It is shown that pitting may be completely suppressed if a one side polished wafer is immersed in an oxygen free solution. An analytical electrochemical study of the (111) and rough face of the same n-Si wafer is presented to yield insight into observations.

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Domaines

Chimie Matériaux

Dates et versions

hal-04166347 , version 1 (19-07-2023)

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Citer

Philippe Allongue, Catherine Henry de Villeneuve, Sylvie Morin, Rabah Boukherroub, Danial D.M. Wayner. The preparation of flat H–Si(111) surfaces in 40% NH4F revisited. Electrochimica Acta, 2000, 45 (28), pp.4591-4598. ⟨10.1016/S0013-4686(00)00610-1⟩. ⟨hal-04166347⟩
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