31.474 (44.359) %- Limiting Highest Efficiencies obtained in the mathbf{n}^+(mathbf{p}^+)-mathbf{p}(mathbf{n}) Crystalline GaAs Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue SCIREA Journal of Physics Année : 2022

31.474 (44.359) %- Limiting Highest Efficiencies obtained in the mathbf{n}^+(mathbf{p}^+)-mathbf{p}(mathbf{n}) Crystalline GaAs Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size

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hal-04165312 , version 1 (18-07-2023)

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H. van Cong, K. C. Ho-Huynh Thi, P. Blaise,, Brouzet Robert, O. Henri-Rousseau. 31.474 (44.359) %- Limiting Highest Efficiencies obtained in the mathbf{n}^+(mathbf{p}^+)-mathbf{p}(mathbf{n}) Crystalline GaAs Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size. SCIREA Journal of Physics, 2022, 7 (4), ⟨10.54647/physics14475⟩. ⟨hal-04165312⟩

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