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Article Dans Une Revue EPJ Photovoltaics Année : 2023

Edge passivation of shingled poly-Si/SiOx passivated contacts solar cells

Résumé

This work aims at the full recovery of efficiency losses induced by shingling double-side poly-Si/SiOx passivated contacts crystalline silicon solar cells. It focuses on thermally-activated Aluminium Oxide (AlOx) layers elaborated by thermal Atomic Layer Deposition (ALD) to passivate the edges of shingled cells cut by using the innovative “45° tilt squaring approach”. The whole procedure featuring high-temperature AlOx annealing led to very low cut-related performance losses. Indeed, the efficiency and FF of the passivated shingled cells surpassed the values obtained for the as-cut shingles by 0.5%abs and 2.6%abs, respectively. Approaches for further improvements are also discussed, particularly to overcome the short-circuit current density decrease observed for passivated shingles.
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Dates et versions

hal-04154754 , version 1 (06-07-2023)

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Franck Dhainaut, Raoul Dabadie, Benoit Martel, Thibaut Desrues, Mickaël Albaric, et al.. Edge passivation of shingled poly-Si/SiOx passivated contacts solar cells. EPJ Photovoltaics, 2023, 14, pp.22. ⟨10.1051/epjpv/2023013⟩. ⟨hal-04154754⟩
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