Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2023

Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide

Résumé

Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is compatible with such implementations, owing to its relatively high refractive index and low losses in the visible range, together with advantageous fabrication techniques. Here, we combine hBN waveguide nanofabrication with the recently demonstrated local generation of quantum emitters using electron irradiation to realize a fully top-down elementary quantum photonic circuit in this material, operating at room temperature. This proof of principle constitutes a first step toward deterministic quantum photonic circuits in hBN.
Fichier principal
Vignette du fichier
Main text.pdf (3.7 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04149508 , version 1 (03-07-2023)

Identifiants

Citer

Domitille Gérard, Michael Rosticher, Kenji Watanabe, Takashi Taniguchi, Julien Barjon, et al.. Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide. Applied Physics Letters, 2023, 122 (26), pp.264001. ⟨10.1063/5.0152721⟩. ⟨hal-04149508⟩
12 Consultations
12 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More