Towards a Common Mode Current Free Packaging Solution for High Voltage Series Connected SiC MOSFET Switches - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Towards a Common Mode Current Free Packaging Solution for High Voltage Series Connected SiC MOSFET Switches

Besar Asllani
Hugo Reynes
Martin Guillet
Pierre Lefranc
  • Fonction : Auteur
  • PersonId : 960120
Cyril Buttay
Bruno Lefebvre
  • Fonction : Auteur
  • PersonId : 1082781

Résumé

Tests are carried out on two different series-connected switches made of six SiC MOSFETs capable of blocking 10 kV and 20 kV respectively. High voltage capacitors are connected to the drain terminals of the MOSFETs to emulate the common mode currents' paths due to parasitic capacitances of the packaging. Due to high dV/dt, common mode currents become dangerous to the switch as they unsettle the voltage sharing during turn-off and unbalance switching losses. This could lead some of the MOSFETs to experience avalanche breakdown. A novel packaging approach that suppresses or balances the common mode currents is introduced.
Fichier principal
Vignette du fichier
PCIM2023_series_connection_archive_Vfinale.pdf (1.25 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04147021 , version 1 (30-06-2023)

Identifiants

  • HAL Id : hal-04147021 , version 1

Citer

Cédric Mathieu de Vienne, Besar Asllani, Hugo Reynes, Martin Guillet, Amin Salim Obaid Al-Hinaai, et al.. Towards a Common Mode Current Free Packaging Solution for High Voltage Series Connected SiC MOSFET Switches. Power Electronics, Intelligent Motion, Renewable Energy and Energy Management ( PCIM ) Europe, May 2023, Nuremberg, Germany. ⟨hal-04147021⟩
11 Consultations
31 Téléchargements

Partager

Gmail Facebook X LinkedIn More