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Communication Dans Un Congrès Année : 2023

CMOS Gate Driver with Integrated Ultra-Accurate and Fast Gate Charge Sensor for Robust and Ultra-Fast Short Circuit Detection of SiC power modules

Résumé

This paper presents an innovative architecture for gate-drivers, offering new solutions to short-circuit issues commonly faced by SiC MOSFET power transistors. Due to their fast switching, SiC power devices require much faster short-circuit detection times than those used for Si MOSFET and IGBTs. A gate driver IC with an integrated ultra-fast and accurate gate current sensor for short-circuit detection is presented. First experimental results demonstrates a low gate current copy error (<1%) with a response time that does not exceed 40ns and a reliable fast short-circuit detection for power modules, within 370ns. This IC is fabricated using NXP Semiconductors' high-voltage SMARTMOS10 130nm CMOS SOI technology.
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Dates et versions

hal-04132615 , version 1 (19-06-2023)

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Anas El Boubkari, Nicolas Rouger, Frédéric Richardeau, Marc Cousineau, Thierry Sicard, et al.. CMOS Gate Driver with Integrated Ultra-Accurate and Fast Gate Charge Sensor for Robust and Ultra-Fast Short Circuit Detection of SiC power modules. 2023 IEEE 35th International Symposium on Power Semiconductor Devices and ICs (IEEE ISPSD), Hong Kong University of Science and Technology (HKUST), May 2023, Hong Kong, France. pp.68-71, ⟨10.1109/ispsd57135.2023.10147567⟩. ⟨hal-04132615⟩
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