In this paper, we present the design and fabrication of a 11-layer notch filter for photovoltaic applications. Thickness modulation has been done on a starting quarter-wave design to obtain a 11-layer final structure. For our design parameters, we considered materials with indices of 2.09 and 1.51 as high and low refractive index materials, respectively. Since this filter aims for photovoltaic applications, we defined the substrate as silicon. The design shows a reflection peak of around 73% from 350 to 467 nm with a FWHM of 79 nm along with less than 10% reflection for longer wavelengths of the remaining high transmission region of 300-1200 nm. For fabrication, we used silicon nitride and silicon oxynitride as alternating high and low refractive index materials on a silicon substrate. Layers of silicon nitride and oxynitride were deposited with an electron cyclotron resonance plasma-enhanced chemical vapor deposition reactor and characterized with variable angle spectroscopic ellipsometry and spectrophotometry.