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            <title xml:lang="en">Ku Band SiGe Power Amplifier With High Output Power and SWR Robustness Up to 120°C</title>
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                <term xml:lang="en">Power measurement</term>
                <term xml:lang="en">Balanced architecture</term>
                <term xml:lang="en">High output power</term>
                <term xml:lang="en">Ku band</term>
                <term xml:lang="en">K band</term>
                <term xml:lang="en">Power amplifier</term>
                <term xml:lang="en">Power generation</term>
                <term xml:lang="en">SiGe</term>
                <term xml:lang="en">Silicon germanium</term>
                <term xml:lang="en">Gain</term>
                <term xml:lang="en">Transistors</term>
                <term xml:lang="en">Avalanche</term>
                <term xml:lang="en">Selfheating</term>
                <term xml:lang="en">Impact ionization</term>
                <term xml:lang="en">Thermal stability</term>
                <term xml:lang="en">SWR-resilience</term>
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              <p>This paper presents a highly compact Ku band 130nm SiGe power amplifier (PA) in a double balanced architecture. A highly compact low-loss 4 to 1 combiner is associated with a cascode topology to provide a power combination up to 1W and a high resilience to the standing wave ratio (SWR) from 2:1 to 4:1. A high thermal stability up to 120 ∘ C is ensured by an advanced configuration of transistors. A choices innovative set on the cascode stage design and layout improves the control of the impact ionization and selfheating. A driver stage allows the circuit to achieve over 20 dB of linear gain. At 30 ∘ C, 18 GHz and a supply voltage (V SUPPLY) of 4.2V, this power amplifier achieves a measured saturated power (P sat) of 30 dBm for an output power at the 1dB compression point (OCP 1dB) of 28.8 dBm, a maximum power added efficiency (PAE) of 23.5% and a linear gain of 21.4 dB. The gain difference across 2:1 SWR phase variations is only 0.8 dB. The active area of the die chip is only 1.13 mm 2 .</p>
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