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Article Dans Une Revue IEEE Transactions on Circuits and Systems I: Regular Papers Année : 2023

Ku Band SiGe Power Amplifier With High Output Power and SWR Robustness Up to 120°C

Anne-Charlotte Amiaud
  • Fonction : Auteur
Samuel Redois
  • Fonction : Auteur
Laurent Roussel
  • Fonction : Auteur
Bruno Louis
  • Fonction : Auteur
Thomas Merlet
  • Fonction : Auteur
Vincent Petit
  • Fonction : Auteur

Résumé

This paper presents a highly compact Ku band 130nm SiGe power amplifier (PA) in a double balanced architecture. A highly compact low-loss 4 to 1 combiner is associated with a cascode topology to provide a power combination up to 1W and a high resilience to the standing wave ratio (SWR) from 2:1 to 4:1. A high thermal stability up to 120 ∘ C is ensured by an advanced configuration of transistors. A choices innovative set on the cascode stage design and layout improves the control of the impact ionization and selfheating. A driver stage allows the circuit to achieve over 20 dB of linear gain. At 30 ∘ C, 18 GHz and a supply voltage (V SUPPLY) of 4.2V, this power amplifier achieves a measured saturated power (P sat) of 30 dBm for an output power at the 1dB compression point (OCP 1dB) of 28.8 dBm, a maximum power added efficiency (PAE) of 23.5% and a linear gain of 21.4 dB. The gain difference across 2:1 SWR phase variations is only 0.8 dB. The active area of the die chip is only 1.13 mm 2 .
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Dates et versions

hal-04119191 , version 1 (06-06-2023)

Identifiants

Citer

Benjamin Coquillas, Eric Kerherve, Anne-Charlotte Amiaud, Samuel Redois, Laurent Roussel, et al.. Ku Band SiGe Power Amplifier With High Output Power and SWR Robustness Up to 120°C. IEEE Transactions on Circuits and Systems I: Regular Papers, 2023, pp.1-8. ⟨10.1109/tcsi.2023.3274496⟩. ⟨hal-04119191⟩
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